SICC is constantly pursuing higher crystal quality and processing quality to meet customer needs.
The 4 & 6 inch products are available for supply currently
The 8-inch product is under development
*Please contact our sales for more detailed information.
Diameter（mm） 100 & 150
Surface Finish Epi-ready
By growing GaN epitaxy layer on semi-insulating silicon carbide substrate, silicon carbide based GAN epitaxy wafer can be further made into HEMT and other microwave RF devices, which can be used in information communication, radio detection and other fields.
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